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4.13. Condensed Matter Physics (SSP)

Condensed Matter Physics investigates the macroscopic and microscopic properties of matter in its solid and liquid phases. It explores how collective interactions between atoms lead to emergent phenomena such as electrical conductivity, magnetism, and semiconductor behavior, directly relevant to materials engineering.

Knowledge Area (KA)	Core Tier1	Core Tier2
4.13.1 Crystal Structures and Reciprocal Lattices	Elective
4.13.2 Free Electron Model and Band Theory of Solids	Elective
4.13.3 Semiconductors, Insulators, and Metals	Elective

4.13.1. SSP/Crystal Structures and Reciprocal Lattices ↑ Back to top

The mathematical description of periodic atomic arrangements in real and momentum space, forming the structural basis for materials engineering and diffraction analysis.
Topics:
Core

• The 14 Bravais lattices and point group symmetries in engineering materials
• Unit cells, Wigner-Seitz cells, and the basis of atoms in common engineering materials
• Miller indices for crystal planes and directions in structural materials
• The First Brillouin Zone and its significance for electronic and phonon properties
• Atomic packing fractions and coordination numbers for SC, BCC, FCC, and HCP structures

Learning Outcomes:
Core:

1. Determine reciprocal lattice vectors for FCC and BCC engineering metal crystals [Usage]
2. Calculate the atomic packing factor for common engineering crystal structures [Assessment]
3. Explain the use of Miller indices to identify slip planes and fracture planes in engineering metals [Familiarity]
4. Identify rotational and translational symmetries relevant to engineering material texture analysis [Usage]

4.13.2. SSP/Free Electron Model and Band Theory of Solids ↑ Back to top

The behavior of electrons in periodic potentials, explaining electrical conduction, band gaps, and the electronic properties of engineering solids.
Topics:
Core

• The Drude model: electrical conductivity, drift velocity, and Hall effect in engineering metals
• The Sommerfeld model: Fermi energy, Fermi surface, and density of states
• Bloch's Theorem for electron wavefunctions in periodic crystal potentials
• The Kronig-Penney model and the emergence of energy band gaps
• The tight-binding approximation and band structure of engineering materials

Learning Outcomes:
Core:

1. Calculate the Fermi energy and Fermi temperature for common engineering metals [Usage]
2. Explain the origin of energy band gaps in crystalline solids and their engineering significance [Familiarity]
3. Evaluate the effective mass of charge carriers from a given \(E(k)\) dispersion relation [Assessment]
4. Apply band theory to predict the electrical properties of engineering metal alloys and semiconductors [Usage]

4.13.3. SSP/Semiconductors, Insulators, and Metals ↑ Back to top

Classification of engineering solids based on electronic band structure, carrier density, and doping, foundational to microelectronics and photovoltaics.
Topics:
Core

• Intrinsic semiconductors: carrier concentration and the law of mass action
• Extrinsic semiconductors: n-type and p-type doping and Fermi level shift
• The p-n junction: depletion region, built-in potential, and diode operation
• Carrier mobility, resistivity, and their temperature dependence in engineering semiconductors
• Direct and indirect bandgap semiconductors and their use in LEDs and solar cells

Learning Outcomes:
Core:

1. Determine intrinsic carrier concentration of silicon at room temperature [Usage]
2. Analyze how doping shifts the Fermi level and modifies carrier density in engineering semiconductors [Assessment]
3. Design a p-n junction with specified breakdown voltage for a power electronics application [Usage]
4. Select between direct and indirect bandgap semiconductors for LED versus solar cell applications [Assessment]